Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment

Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment

A new analytical model for enhanced yield of radiation-induced charge in low-field thick oxides due to lesser recombination under low-dose-rate and high temperature conditions has been developed. Numerical simulations are quantitatively well agreed with experimental data.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Zebrev, G.I., Pavlov, D.Y., Pershenkov, V.S., Nikiforov, A.Y., Sogoyan, A.V., Boychenko, D.V., Ulimov, V.N., Emelyanov, V.V.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bipolar Transistor
Bipolar transistors
Charge carrier processes
Degradation
ELDRS
Electron emission
Electron mobility
Electron traps
Low-dose-rate Irradiation
Microelectronics
Physics
Recombination
Spontaneous emission
Temperature
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A new analytical model for enhanced yield of radiation-induced charge in low-field thick oxides due to lesser recombination under low-dose-rate and high temperature conditions has been developed. Numerical simulations are quantitatively well agreed with experimental data.
ISSN:0379-6566
DOI:10.1109/RADECS.2005.4365613