A Quantum Definition of Threshold Voltage in MuGFETs

A Quantum Definition of Threshold Voltage in MuGFETs

The dependence of threshold voltage on device dimensions and number of gates is analyzed. A new definition of threshold voltage, based on quantum-mechanical considerations, is proposed.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Se Re Na Yun, Chong Gun Yu, Jong Tae Park, Chi-Woo Lee, Lederer, D., Afzalian, A., Ran Yan, Colinge, J.P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electrons
FETs
FinFETs
Radio access networks
Schrodinger equation
Shape
Silicon
Threshold voltage
USA Councils
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The dependence of threshold voltage on device dimensions and number of gates is analyzed. A new definition of threshold voltage, based on quantum-mechanical considerations, is proposed.
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2007.4357890