Ge Photodetectors Integrated with Waveguides for Electronic-Photonic Integrated Circuits on CMOS Platform

Ge Photodetectors Integrated with Waveguides for Electronic-Photonic Integrated Circuits on CMOS Platform

Ge p-i-n photodetectors monolithically integrated with silicon oxynitride and silicon nitride waveguides on Si CMOS platform are presented. The devices demonstrated high efficiency (~1.08 A/W) and high-speed (>14 Gbit/s) performances at low bias.

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Bibliographische Detailangaben
Hauptverfasser: Donghwan Ahn, Ching-yin Hong, Jifeng Liu, Beals, M., Jian Chen, Kaertner, F.X., Kimerling, L.C., Michel, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS integrated circuits
High speed optical techniques
Leakage current
Optical films
Optical receivers
Optical waveguides
Photoconductivity
Photodetectors
Semiconductor films
Silicon
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Beschreibung
Zusammenfassung:Ge p-i-n photodetectors monolithically integrated with silicon oxynitride and silicon nitride waveguides on Si CMOS platform are presented. The devices demonstrated high efficiency (~1.08 A/W) and high-speed (>14 Gbit/s) performances at low bias.
DOI:10.1109/OFC.2007.4348675