Towards a monolithically-integrated electrically-pumped Si light emitter technology using epitaxial erbium oxide

Towards a monolithically-integrated electrically-pumped Si light emitter technology using epitaxial erbium oxide

We present epitaxial erbium oxide films on Si as a potential light emitter technology for integration with CMOS electronics. These films offer strong photoluminescence and can be integrated into heterostructures for providing photodetection and electroluminescence.

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Bibliographische Detailangaben
Hauptverfasser: Sabnis, V.A., Yuen, H.B., Jamora, A., Semans, S., Atanackovic, P., Weldon, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS technology
Erbium
Light emitting diodes
Luminescence
Optical buffering
Optical films
Photonic band gap
Semiconductor films
Silicon
Substrates
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Beschreibung
Zusammenfassung:We present epitaxial erbium oxide films on Si as a potential light emitter technology for integration with CMOS electronics. These films offer strong photoluminescence and can be integrated into heterostructures for providing photodetection and electroluminescence.
ISSN:1949-2081
1949-209X
DOI:10.1109/GROUP4.2007.4347730