The Quantum Confined Stark Effect in Ge/SiGe Quantum Wells: An efficient electroabsorption mechanism for silicon-based applications

The recent discovery of the quantum confined Stark effect in Ge/SiGe quantum wells with absorption coefficient modulation comparable to III-V materials will permit compact, low-power photonics components densely integrated with silicon electronics.

Bibliographische Detailangaben

Hauptverfasser:	Roth, J.E., Fidaner, O., Schaevitz, R.K., Edwards, E.H., Yu-Hsuan Kuo, Kamins, T.I., Harris, J.S., Miller, D.A.B.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Absorption Germanium silicon alloys High speed optical techniques III-V semiconductor materials Optical buffering Optical modulation Potential well Silicon germanium Stark effect Substrates
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