The Quantum Confined Stark Effect in Ge/SiGe Quantum Wells: An efficient electroabsorption mechanism for silicon-based applications

The Quantum Confined Stark Effect in Ge/SiGe Quantum Wells: An efficient electroabsorption mechanism for silicon-based applications

The recent discovery of the quantum confined Stark effect in Ge/SiGe quantum wells with absorption coefficient modulation comparable to III-V materials will permit compact, low-power photonics components densely integrated with silicon electronics.

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Bibliographische Detailangaben
Hauptverfasser: Roth, J.E., Fidaner, O., Schaevitz, R.K., Edwards, E.H., Yu-Hsuan Kuo, Kamins, T.I., Harris, J.S., Miller, D.A.B.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Absorption
Germanium silicon alloys
High speed optical techniques
III-V semiconductor materials
Optical buffering
Optical modulation
Potential well
Silicon germanium
Stark effect
Substrates
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Beschreibung
Zusammenfassung:The recent discovery of the quantum confined Stark effect in Ge/SiGe quantum wells with absorption coefficient modulation comparable to III-V materials will permit compact, low-power photonics components densely integrated with silicon electronics.
ISSN:1949-2081
1949-209X
DOI:10.1109/GROUP4.2007.4347709