Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform
Tensile-strained Ge photodetector is realized on Si-substrate using novel SiSiGe compliant layer with two-step Ge-process. Monolithic integration of p-i-n detectors with low dark current (0.4 nA), responsivity (190 mA/W) and high speed (5 GHz) on Ge-CMOS platform is demonstrated, with Ge pMOSFET sho...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng ; jpn |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 3 |
|---|---|
| container_issue | |
| container_start_page | 1 |
| container_title | |
| container_volume | |
| creator | Wang, J. Loh, W.Y. Zang, H. Yu, M.B. Chua, K.T. Loh, T.H. Ye, J.D. Yang, R. Wang, X.L. Lee, S.J. Cho, B.J. Lo, G.Q. Kwong, D.L. |
| description | Tensile-strained Ge photodetector is realized on Si-substrate using novel SiSiGe compliant layer with two-step Ge-process. Monolithic integration of p-i-n detectors with low dark current (0.4 nA), responsivity (190 mA/W) and high speed (5 GHz) on Ge-CMOS platform is demonstrated, with Ge pMOSFET showing 2X Si hole mobility. |
| doi_str_mv | 10.1109/GROUP4.2007.4347664 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4347664</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4347664</ieee_id><sourcerecordid>4347664</sourcerecordid><originalsourceid>FETCH-LOGICAL-i864-6c232bf6cdcc9a686a4f88e9516160aa8cacb3ae343149322892cb0e60b436b83</originalsourceid><addsrcrecordid>eNpVkM1KAzEURuMfWOo8QTd5gdSb5DaTLEvRWqjMYCu4K5nMHY20M2UmCL69BYvg6lucw1l8jE0kTKUEd798KV5LnCqAfIoac2PwgmUutxIVIjg9s5dsJB06ocC9Xf1jKK__mJW3LBuGTwCQyhplYcTKVZvovfcpdi3vGr6ldoh7EpvU-9hSzZfEjyKKlpcfXepqShRS1_OTPa-_fBtOyuK52PBy71PT9Yc7dtP4_UDZecds-_iwXTyJdbFcLeZrEa1BYYLSqmpMqENw3ljjsbGW3EwaacB7G3yotCeNWqLTSlmnQgVkoEJtKqvHbPKbjUS0O_bx4Pvv3fke_QOOF1PT</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Wang, J. ; Loh, W.Y. ; Zang, H. ; Yu, M.B. ; Chua, K.T. ; Loh, T.H. ; Ye, J.D. ; Yang, R. ; Wang, X.L. ; Lee, S.J. ; Cho, B.J. ; Lo, G.Q. ; Kwong, D.L.</creator><creatorcontrib>Wang, J. ; Loh, W.Y. ; Zang, H. ; Yu, M.B. ; Chua, K.T. ; Loh, T.H. ; Ye, J.D. ; Yang, R. ; Wang, X.L. ; Lee, S.J. ; Cho, B.J. ; Lo, G.Q. ; Kwong, D.L.</creatorcontrib><description>Tensile-strained Ge photodetector is realized on Si-substrate using novel SiSiGe compliant layer with two-step Ge-process. Monolithic integration of p-i-n detectors with low dark current (0.4 nA), responsivity (190 mA/W) and high speed (5 GHz) on Ge-CMOS platform is demonstrated, with Ge pMOSFET showing 2X Si hole mobility.</description><identifier>ISSN: 1949-2081</identifier><identifier>ISBN: 9781424409341</identifier><identifier>ISBN: 1424409349</identifier><identifier>EISSN: 1949-209X</identifier><identifier>EISBN: 9781424409358</identifier><identifier>EISBN: 1424409357</identifier><identifier>DOI: 10.1109/GROUP4.2007.4347664</identifier><language>eng ; jpn</language><publisher>IEEE</publisher><subject>Annealing ; Dark current ; Detectors ; Epitaxial growth ; Germanium silicon alloys ; MOSFET circuits ; Photodetectors ; PIN photodiodes ; Silicon germanium ; Temperature</subject><ispartof>2007 4th IEEE International Conference on Group IV Photonics, 2007, p.1-3</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4347664$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4347664$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Wang, J.</creatorcontrib><creatorcontrib>Loh, W.Y.</creatorcontrib><creatorcontrib>Zang, H.</creatorcontrib><creatorcontrib>Yu, M.B.</creatorcontrib><creatorcontrib>Chua, K.T.</creatorcontrib><creatorcontrib>Loh, T.H.</creatorcontrib><creatorcontrib>Ye, J.D.</creatorcontrib><creatorcontrib>Yang, R.</creatorcontrib><creatorcontrib>Wang, X.L.</creatorcontrib><creatorcontrib>Lee, S.J.</creatorcontrib><creatorcontrib>Cho, B.J.</creatorcontrib><creatorcontrib>Lo, G.Q.</creatorcontrib><creatorcontrib>Kwong, D.L.</creatorcontrib><title>Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform</title><title>2007 4th IEEE International Conference on Group IV Photonics</title><addtitle>GROUP4</addtitle><description>Tensile-strained Ge photodetector is realized on Si-substrate using novel SiSiGe compliant layer with two-step Ge-process. Monolithic integration of p-i-n detectors with low dark current (0.4 nA), responsivity (190 mA/W) and high speed (5 GHz) on Ge-CMOS platform is demonstrated, with Ge pMOSFET showing 2X Si hole mobility.</description><subject>Annealing</subject><subject>Dark current</subject><subject>Detectors</subject><subject>Epitaxial growth</subject><subject>Germanium silicon alloys</subject><subject>MOSFET circuits</subject><subject>Photodetectors</subject><subject>PIN photodiodes</subject><subject>Silicon germanium</subject><subject>Temperature</subject><issn>1949-2081</issn><issn>1949-209X</issn><isbn>9781424409341</isbn><isbn>1424409349</isbn><isbn>9781424409358</isbn><isbn>1424409357</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkM1KAzEURuMfWOo8QTd5gdSb5DaTLEvRWqjMYCu4K5nMHY20M2UmCL69BYvg6lucw1l8jE0kTKUEd798KV5LnCqAfIoac2PwgmUutxIVIjg9s5dsJB06ocC9Xf1jKK__mJW3LBuGTwCQyhplYcTKVZvovfcpdi3vGr6ldoh7EpvU-9hSzZfEjyKKlpcfXepqShRS1_OTPa-_fBtOyuK52PBy71PT9Yc7dtP4_UDZecds-_iwXTyJdbFcLeZrEa1BYYLSqmpMqENw3ljjsbGW3EwaacB7G3yotCeNWqLTSlmnQgVkoEJtKqvHbPKbjUS0O_bx4Pvv3fke_QOOF1PT</recordid><startdate>200709</startdate><enddate>200709</enddate><creator>Wang, J.</creator><creator>Loh, W.Y.</creator><creator>Zang, H.</creator><creator>Yu, M.B.</creator><creator>Chua, K.T.</creator><creator>Loh, T.H.</creator><creator>Ye, J.D.</creator><creator>Yang, R.</creator><creator>Wang, X.L.</creator><creator>Lee, S.J.</creator><creator>Cho, B.J.</creator><creator>Lo, G.Q.</creator><creator>Kwong, D.L.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200709</creationdate><title>Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform</title><author>Wang, J. ; Loh, W.Y. ; Zang, H. ; Yu, M.B. ; Chua, K.T. ; Loh, T.H. ; Ye, J.D. ; Yang, R. ; Wang, X.L. ; Lee, S.J. ; Cho, B.J. ; Lo, G.Q. ; Kwong, D.L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i864-6c232bf6cdcc9a686a4f88e9516160aa8cacb3ae343149322892cb0e60b436b83</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng ; jpn</language><creationdate>2007</creationdate><topic>Annealing</topic><topic>Dark current</topic><topic>Detectors</topic><topic>Epitaxial growth</topic><topic>Germanium silicon alloys</topic><topic>MOSFET circuits</topic><topic>Photodetectors</topic><topic>PIN photodiodes</topic><topic>Silicon germanium</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Wang, J.</creatorcontrib><creatorcontrib>Loh, W.Y.</creatorcontrib><creatorcontrib>Zang, H.</creatorcontrib><creatorcontrib>Yu, M.B.</creatorcontrib><creatorcontrib>Chua, K.T.</creatorcontrib><creatorcontrib>Loh, T.H.</creatorcontrib><creatorcontrib>Ye, J.D.</creatorcontrib><creatorcontrib>Yang, R.</creatorcontrib><creatorcontrib>Wang, X.L.</creatorcontrib><creatorcontrib>Lee, S.J.</creatorcontrib><creatorcontrib>Cho, B.J.</creatorcontrib><creatorcontrib>Lo, G.Q.</creatorcontrib><creatorcontrib>Kwong, D.L.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang, J.</au><au>Loh, W.Y.</au><au>Zang, H.</au><au>Yu, M.B.</au><au>Chua, K.T.</au><au>Loh, T.H.</au><au>Ye, J.D.</au><au>Yang, R.</au><au>Wang, X.L.</au><au>Lee, S.J.</au><au>Cho, B.J.</au><au>Lo, G.Q.</au><au>Kwong, D.L.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform</atitle><btitle>2007 4th IEEE International Conference on Group IV Photonics</btitle><stitle>GROUP4</stitle><date>2007-09</date><risdate>2007</risdate><spage>1</spage><epage>3</epage><pages>1-3</pages><issn>1949-2081</issn><eissn>1949-209X</eissn><isbn>9781424409341</isbn><isbn>1424409349</isbn><eisbn>9781424409358</eisbn><eisbn>1424409357</eisbn><abstract>Tensile-strained Ge photodetector is realized on Si-substrate using novel SiSiGe compliant layer with two-step Ge-process. Monolithic integration of p-i-n detectors with low dark current (0.4 nA), responsivity (190 mA/W) and high speed (5 GHz) on Ge-CMOS platform is demonstrated, with Ge pMOSFET showing 2X Si hole mobility.</abstract><pub>IEEE</pub><doi>10.1109/GROUP4.2007.4347664</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1949-2081 |
| ispartof | 2007 4th IEEE International Conference on Group IV Photonics, 2007, p.1-3 |
| issn | 1949-2081 1949-209X |
| language | eng ; jpn |
| recordid | cdi_ieee_primary_4347664 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Dark current Detectors Epitaxial growth Germanium silicon alloys MOSFET circuits Photodetectors PIN photodiodes Silicon germanium Temperature |
| title | Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T03%3A31%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Integration%20of%20Tensile-Strained%20Ge%20p-i-n%20Photodetector%20on%20Advanced%20CMOS%20Platform&rft.btitle=2007%204th%20IEEE%20International%20Conference%20on%20Group%20IV%20Photonics&rft.au=Wang,%20J.&rft.date=2007-09&rft.spage=1&rft.epage=3&rft.pages=1-3&rft.issn=1949-2081&rft.eissn=1949-209X&rft.isbn=9781424409341&rft.isbn_list=1424409349&rft_id=info:doi/10.1109/GROUP4.2007.4347664&rft_dat=%3Cieee_6IE%3E4347664%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424409358&rft.eisbn_list=1424409357&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4347664&rfr_iscdi=true |