Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform

Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform

Tensile-strained Ge photodetector is realized on Si-substrate using novel SiSiGe compliant layer with two-step Ge-process. Monolithic integration of p-i-n detectors with low dark current (0.4 nA), responsivity (190 mA/W) and high speed (5 GHz) on Ge-CMOS platform is demonstrated, with Ge pMOSFET sho...

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Hauptverfasser: Wang, J., Loh, W.Y., Zang, H., Yu, M.B., Chua, K.T., Loh, T.H., Ye, J.D., Yang, R., Wang, X.L., Lee, S.J., Cho, B.J., Lo, G.Q., Kwong, D.L.
Format: Tagungsbericht
Sprache:eng ; jpn
Schlagworte:
Annealing
Dark current
Detectors
Epitaxial growth
Germanium silicon alloys
MOSFET circuits
Photodetectors
PIN photodiodes
Silicon germanium
Temperature
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Beschreibung
Zusammenfassung:Tensile-strained Ge photodetector is realized on Si-substrate using novel SiSiGe compliant layer with two-step Ge-process. Monolithic integration of p-i-n detectors with low dark current (0.4 nA), responsivity (190 mA/W) and high speed (5 GHz) on Ge-CMOS platform is demonstrated, with Ge pMOSFET showing 2X Si hole mobility.
ISSN:1949-2081
1949-209X
DOI:10.1109/GROUP4.2007.4347664