Total ionizing dose and single event effect studies of a 0.25μm CMOS serializer ASIC

A 0.25 μm CMOS serializer ASIC, designed using radiation tolerant layout practice, was exposed to proton beam at various flux levels and accumulated fluence over 1.9times10 15 protons/cm 2 (100 Mrad (Si)). The ASIC survived this total ionizing dose (TID) with no degradation in function. Single event...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Chu Xiang, Tiankuan Liu, Cheng-An Yang, Ping Gui, Chen, W., Junheng Zhang, Peiqing Zhu, Jingbo Ye, Stroynowski, R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Application specific integrated circuits CMOS technology Large Hadron Collider Optical receivers Optical transmitters Particle beams Protons Single event upset System testing Vertical cavity surface emitting lasers
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A 0.25 μm CMOS serializer ASIC, designed using radiation tolerant layout practice, was exposed to proton beam at various flux levels and accumulated fluence over 1.9times10 15 protons/cm 2 (100 Mrad (Si)). The ASIC survived this total ionizing dose (TID) with no degradation in function. Single event effect (SEE) cross-sections are also calculated.
ISSN:	2154-0519 2154-0535
DOI:	10.1109/REDW.2007.4342553