A Nanowire Transistor for High Performance Logic and Terabit Non-Volatile Memory Devices

Silicon nanowire-FET (SiNAWI-FET) for high performance logic device with consideration of current direction effects and terabit non-volatile memory (NVM) device using an 8 nm SiNAWI-NVM with oxide/nitride/oxide (ONO) and omega-gate structure is reported for the first time. N-and P-channel SiNAWI-FET...

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Bibliographische Detailangaben

Hauptverfasser:	Lee, Hyunjin, Kim, Ju-Hyun, Bae, Dong-il, Jeon, Sang Cheol, Kim, Kwang Hee, Lee, Gi Sung, Oh, Jae Sub, Park, Yun Chang, Bae, Woo Ho, Yoo, Jung Jae, Yang, Jun Mo, Ryu, Seong-Wan, Lee, Hee Mok, Choi, Yang-Kyu, Han, Jin-Woo, Yu, Lee-Eun, Im, Maesoon, Kim, Chungjin, Kim, Sungho, Lee, Eujune, Kim, Kuk-Hwan
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Fabrication FinFETs Logic devices MOS devices Nanoscale devices Nanostructures Nonvolatile memory Scalability Silicon Very large scale integration
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