A Nanowire Transistor for High Performance Logic and Terabit Non-Volatile Memory Devices

Silicon nanowire-FET (SiNAWI-FET) for high performance logic device with consideration of current direction effects and terabit non-volatile memory (NVM) device using an 8 nm SiNAWI-NVM with oxide/nitride/oxide (ONO) and omega-gate structure is reported for the first time. N-and P-channel SiNAWI-FET...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Lee, Hyunjin, Kim, Ju-Hyun, Bae, Dong-il, Jeon, Sang Cheol, Kim, Kwang Hee, Lee, Gi Sung, Oh, Jae Sub, Park, Yun Chang, Bae, Woo Ho, Yoo, Jung Jae, Yang, Jun Mo, Ryu, Seong-Wan, Lee, Hee Mok, Choi, Yang-Kyu, Han, Jin-Woo, Yu, Lee-Eun, Im, Maesoon, Kim, Chungjin, Kim, Sungho, Lee, Eujune, Kim, Kuk-Hwan
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Silicon nanowire-FET (SiNAWI-FET) for high performance logic device with consideration of current direction effects and terabit non-volatile memory (NVM) device using an 8 nm SiNAWI-NVM with oxide/nitride/oxide (ONO) and omega-gate structure is reported for the first time. N-and P-channel SiNAWI-FET showed the highest driving current on (110)/ crystal orientation without device rotation, whereas most 3-dimensional NMOS report higher driving current on 45deg device rotation rather than 0deg. Utilizing an 7 nm spherical nanowire on the 8 nm SiNAWI-NVM with ONO structure, 1.7 V V T -window was achieved from 12 V/80 musec program conditions with retention enhancement.
ISSN:0743-1562
DOI:10.1109/VLSIT.2007.4339761