Technology Scaling and Device Design for 350 GHz RF Performance in a 45nm Bulk CMOS Process

Power gain (f MAX ) of 350 GHz and cut-off frequency (f T ) of 280 GHz is demonstrated for 36 nm L poly devices in a 45 nm bulk CMOS process. A record f T of 350 GHz (intrinsic f T 425 GHz), without any loss of f MAX is seen in 28 nm L poly devices. Combination of advanced lithography and liner stre...

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Hauptverfasser:	Hongmei Li, Jagannathan, B., Jing Wang, Tai-Chi Su, Sweeney, S., Pekarik, J.J., Yun Shi, Greenberg, D., Zhenrong Jin, Groves, R., Wagner, L., Csutak, S.
Format:	Tagungsbericht
Sprache:	eng ; jpn
Schlagworte:	CMOS process CMOS technology Data mining Electrical resistance measurement Gain measurement Lithography Parasitic capacitance Radio frequency Stress Wiring
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