Technology Scaling and Device Design for 350 GHz RF Performance in a 45nm Bulk CMOS Process

Power gain (f MAX ) of 350 GHz and cut-off frequency (f T ) of 280 GHz is demonstrated for 36 nm L poly devices in a 45 nm bulk CMOS process. A record f T of 350 GHz (intrinsic f T 425 GHz), without any loss of f MAX is seen in 28 nm L poly devices. Combination of advanced lithography and liner stress effect can be leveraged to further boost f T and f MAX by 14% with a relaxed pitch device. Comparison with 90 and 65 nm nodes illustrates the impact of scaling and parasitics.