Bit Cost Scalable Technology with Punch and Plug Process for Ultra High Density Flash Memory

We propose Bit-Cost Scalable (BiCS) technology which realizes a multi-stacked memory array with a few constant critical lithography steps regardless of number of stacked layer to keep a continuous reduction of bit cost. In this technology, whole stack of electrode plate is punched through and plugge...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Tanaka, H., Kido, M., Yahashi, K., Oomura, M., Katsumata, R., Kito, M., Fukuzumi, Y., Sato, M., Nagata, Y., Matsuoka, Y., Iwata, Y., Aochi, H., Nitayama, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We propose Bit-Cost Scalable (BiCS) technology which realizes a multi-stacked memory array with a few constant critical lithography steps regardless of number of stacked layer to keep a continuous reduction of bit cost. In this technology, whole stack of electrode plate is punched through and plugged by another electrode material. SONOS type flash technology is successfully applied to achieve BiCS flash memory. Its cell array concept, fabrication process and characteristics of key features are presented.
ISSN:0743-1562
DOI:10.1109/VLSIT.2007.4339708