A Scalable Self-Aligned Contact NOR Flash Technology

A Scalable Self-Aligned Contact NOR Flash Technology

A highly manufacturable self-aligned contact ETOX ™ NOR flash memory technology scalable beyond the 40nm node is presented. The technology has been demonstrated on an MLC-capable 256Mb array at the 65nm node with the smallest cell area (0.036μm 2 ) reported to date. Key features include aggressively...

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Hauptverfasser: Wei, M., Banerjee, R., Zhang, L., Masad, A., Reidy, S., Ahn, J., Chao, H., Lim, C., Castro, T., Karpenko, O., Ru, M., Fastow, R., Brand, A., Guo, X., Gorman, J., McMahon, W.J., Woo, B.J., Fazio, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Costs
Dielectrics
Dry etching
ETOX^TM
Flash
Flash memory
Implants
Lithography
NOR
Plugs
Rails
SAC
Space technology
Wet etching
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Beschreibung
Zusammenfassung:A highly manufacturable self-aligned contact ETOX ™ NOR flash memory technology scalable beyond the 40nm node is presented. The technology has been demonstrated on an MLC-capable 256Mb array at the 65nm node with the smallest cell area (0.036μm 2 ) reported to date. Key features include aggressively scaled drain space, symmetric S/D layout for superior lithography and device scaling, novel self-aligned contact integration with excellent spacer reliability, and equivalent CMOS performance to the conventional ETOX ™ process flow.
ISSN:0743-1562
DOI:10.1109/VLSIT.2007.4339702