Characterization of an Ultra-Hard CMOS 64K Static RAM

Characterization of an Ultra-Hard CMOS 64K Static RAM

We have irradiated radiation-hard 64K CMOS Static RAMs in a 60Co pool at dose rates of 3 and 70 Rads-(SiO2)/sec to simulate a space radiation environment. The devices failed due to write-failure at a total gamma dose in some cases greater than 50 MRads(SiO2). Test Transistors were also irradiated an...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on nuclear science 1987-12, Vol.34 (6), p.1455-1459
Hauptverfasser: Jenkins, William C., Martin, Richard L., Hughes, Harold L.
Format: Artikel
Sprache:eng
Schlagworte:
Bonding
Failure analysis
Laboratories
Performance evaluation
Random access memory
Read-write memory
Semiconductor device measurement
Testing
Time measurement
Voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We have irradiated radiation-hard 64K CMOS Static RAMs in a 60Co pool at dose rates of 3 and 70 Rads-(SiO2)/sec to simulate a space radiation environment. The devices failed due to write-failure at a total gamma dose in some cases greater than 50 MRads(SiO2). Test Transistors were also irradiated and measured.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1987.4337497