Flash X-Ray Testing of ER3400 EAROMS

Flash X-ray testing of ER3400 MNOS memories demonstrates their memory volatility. Flash X-ray test data is presented for four bias conditions and two write pulse widths. A simple electrical screening technique is described which increases the memory vulnerability threshold. Permanent shifts in acces...

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Veröffentlicht in:	IEEE transactions on nuclear science 1983-01, Vol.30 (6), p.4285-4289
Hauptverfasser:	Abare, W. E., Riley, R. M., Thygeson, T. L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aerospace testing Defense industry EPROM Government Instruments Logic devices Manufacturing Read-write memory Space vector pulse width modulation Threshold voltage
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