Flash X-Ray Testing of ER3400 EAROMS

Flash X-Ray Testing of ER3400 EAROMS

Flash X-ray testing of ER3400 MNOS memories demonstrates their memory volatility. Flash X-ray test data is presented for four bias conditions and two write pulse widths. A simple electrical screening technique is described which increases the memory vulnerability threshold. Permanent shifts in acces...

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Veröffentlicht in:IEEE transactions on nuclear science 1983-01, Vol.30 (6), p.4285-4289
Hauptverfasser: Abare, W. E., Riley, R. M., Thygeson, T. L.
Format: Artikel
Sprache:eng
Schlagworte:
Aerospace testing
Defense industry
EPROM
Government
Instruments
Logic devices
Manufacturing
Read-write memory
Space vector pulse width modulation
Threshold voltage
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Beschreibung
Zusammenfassung:Flash X-ray testing of ER3400 MNOS memories demonstrates their memory volatility. Flash X-ray test data is presented for four bias conditions and two write pulse widths. A simple electrical screening technique is described which increases the memory vulnerability threshold. Permanent shifts in access time and memory reference voltage from accumulated doses are discussed.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1983.4333124