Lumped Model Analysis of Semiconductor Devices Using the NET-2 Circuit/System Analysis Program

Capability of the NET-2 circuit/system computer program in semiconductor device analysis is presented. Semiconductor devices are described in terms of lumped model networks of user-selected complexity. The basic capability is illustrated through the calculation of electrical and radiation-induced tr...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-19: No. 6, 103-107(Dec 1972) Trans. Nucl. Sci. NS-19: No. 6, 103-107(Dec 1972), 1972-01, Vol.19 (6), p.103-107
Hauptverfasser: Raymond, J. P., Krebs, M. G.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Capability of the NET-2 circuit/system computer program in semiconductor device analysis is presented. Semiconductor devices are described in terms of lumped model networks of user-selected complexity. The basic capability is illustrated through the calculation of electrical and radiation-induced transient response of diodes and transistors. Capability of NET-2 is demonstrated by the analysis of a junction-isolated TTL gate. The TTL gate model was derived by the interconnection of detailed lumped models of each of the transistor elements. Calculated electrical switching response and photoresponse accurately simulated observed results.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1972.4326816