Lumped Model Analysis of Semiconductor Devices Using the NET-2 Circuit/System Analysis Program
Capability of the NET-2 circuit/system computer program in semiconductor device analysis is presented. Semiconductor devices are described in terms of lumped model networks of user-selected complexity. The basic capability is illustrated through the calculation of electrical and radiation-induced tr...
Gespeichert in:
Veröffentlicht in: | IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-19: No. 6, 103-107(Dec 1972) Trans. Nucl. Sci. NS-19: No. 6, 103-107(Dec 1972), 1972-01, Vol.19 (6), p.103-107 |
---|---|
Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Capability of the NET-2 circuit/system computer program in semiconductor device analysis is presented. Semiconductor devices are described in terms of lumped model networks of user-selected complexity. The basic capability is illustrated through the calculation of electrical and radiation-induced transient response of diodes and transistors. Capability of NET-2 is demonstrated by the analysis of a junction-isolated TTL gate. The TTL gate model was derived by the interconnection of detailed lumped models of each of the transistor elements. Calculated electrical switching response and photoresponse accurately simulated observed results. |
---|---|
ISSN: | 0018-9499 1558-1578 |
DOI: | 10.1109/TNS.1972.4326816 |