Metal-Oxide-Semiconductor X-Ray Detectors

Metal-Oxide-Semiconductor X-Ray Detectors

Metal-oxide-semiconductor (MOS) devices have been used for detecting low-energy (2 to 20 keV) x rays for incident fluences of 10-4 to 10-1 cal/cm2 (or dosage in the device of 103 to 106 rads) in a bent-crystal spectrometer application. An attractive feature of the detector is that the three function...

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Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on nuclear science 1972-01, Vol.19 (1), p.350-355
Hauptverfasser: Ciarlo, D. R., Kalibjian, R., Mayeda, K., Boster, T. A.
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum
Capacitance
Capacitance-voltage characteristics
Channel bank filters
Electrons
Ionizing radiation
Radiation effects
Silicon
Voltage
X-ray detectors
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Beschreibung
Zusammenfassung:Metal-oxide-semiconductor (MOS) devices have been used for detecting low-energy (2 to 20 keV) x rays for incident fluences of 10-4 to 10-1 cal/cm2 (or dosage in the device of 103 to 106 rads) in a bent-crystal spectrometer application. An attractive feature of the detector is that the three functions of 1) detection, 2) memory, and 3) readout are integrated into one semiconductor chip.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1972.4326531