Time-Resolved Luminescence of Epitaxial InP Nanowires on (111)Si

We observe a biexponential photoluminescence decay process of as-grown InP nanowires on a (111) silicon substrate. The decay characteristics can be explained through the effects of surface states.

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Bibliographische Detailangaben
Hauptverfasser:	Crankshaw, S., Reitzenstein, S., Chuang, L.C., Moewe, M., Munch, S., Hofmann, C., Forchel, A., Connie Chang-Hasnain
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Energy measurement Indium phosphide Luminescence Nanowires Performance evaluation Photoluminescence Radiative recombination Silicon Substrates Temperature
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Beschreibung
Zusammenfassung:	We observe a biexponential photoluminescence decay process of as-grown InP nanowires on a (111) silicon substrate. The decay characteristics can be explained through the effects of surface states.
DOI:	10.1109/INOW.2007.4302932