Anomalous temperature behavior in LDMOS current sensing

Anomalous temperature behavior in LDMOS current sensing

A peculiar temperature mismatch between a power LDMOS and its sense FET develops over time resulting in yield losses. The anomaly is traced to trapped charge in the power LDMOS that arises from a seemingly unrelated change in the hydrogen anneal temperature in the back end. The physical mechanism le...

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Bibliographische Detailangaben
Hauptverfasser: Lin, J., Pendharkar, S., Hower, P., Arch, J., Chatterjee, T., Chen, K., Devore, J., Hu, B., Trogolo, J., Wang, Q.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Circuit synthesis
FETs
Hydrogen
Instruments
Intelligent sensors
Power integrated circuits
Power semiconductor devices
Temperature distribution
Temperature sensors
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Beschreibung
Zusammenfassung:A peculiar temperature mismatch between a power LDMOS and its sense FET develops over time resulting in yield losses. The anomaly is traced to trapped charge in the power LDMOS that arises from a seemingly unrelated change in the hydrogen anneal temperature in the back end. The physical mechanism leading to the anomaly and the interaction between temperature mismatch and metal layout are presented.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2007.4294933