Nano-crystalline phase change memory with composite Si-Sb-Te film for better data retention and lower operation current

Si-Sb-Te (SST) system materials were investigated for non-volatile phase change memory application. By contrast to the conventional GST films, the SST films exhibit stronger thermal stability and smaller RESET current, which were resulted from the self-confine and self-heat mechanisms by the amorpho...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lin, Y.Y., Lv, H.B., Zhou, P., Yin, M., Liao, F.F., Cai, Y.F., Tang, T.A., Feng, J., Zhang, Y., Zhang, Z.F., Qiao, B.W., Lai, Y.F., Cai, B.C., Chen, B.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Conductivity Crystallization Nonvolatile memory Phase change materials Phase change memory Phase change memroy RESET current self-confine self-heat Semiconductor films SST Temperature Thermal resistance Thermal stability Thermal stresses
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!