Nano-crystalline phase change memory with composite Si-Sb-Te film for better data retention and lower operation current

Nano-crystalline phase change memory with composite Si-Sb-Te film for better data retention and lower operation current

Si-Sb-Te (SST) system materials were investigated for non-volatile phase change memory application. By contrast to the conventional GST films, the SST films exhibit stronger thermal stability and smaller RESET current, which were resulted from the self-confine and self-heat mechanisms by the amorpho...

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Hauptverfasser: Lin, Y.Y., Lv, H.B., Zhou, P., Yin, M., Liao, F.F., Cai, Y.F., Tang, T.A., Feng, J., Zhang, Y., Zhang, Z.F., Qiao, B.W., Lai, Y.F., Cai, B.C., Chen, B.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Conductivity
Crystallization
Nonvolatile memory
Phase change materials
Phase change memory
Phase change memroy
RESET current
self-confine
self-heat
Semiconductor films
SST
Temperature
Thermal resistance
Thermal stability
Thermal stresses
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Beschreibung
Zusammenfassung:Si-Sb-Te (SST) system materials were investigated for non-volatile phase change memory application. By contrast to the conventional GST films, the SST films exhibit stronger thermal stability and smaller RESET current, which were resulted from the self-confine and self-heat mechanisms by the amorphous Si-rich regions surrounding the phase change crystalline in SST. It shows a good promise for non-volatile memory applications.
ISSN:2159-483X
DOI:10.1109/NVSMW.2007.4290581