Three-dimensional TCAD Process and Device Simulations
Shrinking feature sizes, novel device designs as well as stress engineering increase the need for three- dimensional process and device simulations. We present several application examples for full 3D process and device simulations using Sentaurus TCAD, including a 3D NMOSFET with shallow trench iso...
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| creator | Avci, I. Balasingam, P. Sayed, K.E. Gharib, J. Johnson, M.D. Kells, K. Kiralyfalvi, G. Koltyzhenkov, V. Kucherov, A. Lyumkis, E. Penzin, O. Polsky, B. Rao, V. Simeonov, S.D. Strecker, N. Tan, Z. Villablanca, L. Fichtner, W. |
| description | Shrinking feature sizes, novel device designs as well as stress engineering increase the need for three- dimensional process and device simulations. We present several application examples for full 3D process and device simulations using Sentaurus TCAD, including a 3D NMOSFET with shallow trench isolations (STI), a PMOSFET device with SiGe pockets for stress engineering (similar to the structure presented in Ref. [1]) and a Omega-FinFET (similar to structures presented in Refs. [2,3]). TCAD simulations of the full process flow as well as of the electrical device characteristics are performed. We also show examples of 3D oxidation simulations with Sentaurus Process. |
| doi_str_mv | 10.1109/UGIM.2006.4286350 |
| format | Conference Proceeding |
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We present several application examples for full 3D process and device simulations using Sentaurus TCAD, including a 3D NMOSFET with shallow trench isolations (STI), a PMOSFET device with SiGe pockets for stress engineering (similar to the structure presented in Ref. [1]) and a Omega-FinFET (similar to structures presented in Refs. [2,3]). TCAD simulations of the full process flow as well as of the electrical device characteristics are performed. 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We present several application examples for full 3D process and device simulations using Sentaurus TCAD, including a 3D NMOSFET with shallow trench isolations (STI), a PMOSFET device with SiGe pockets for stress engineering (similar to the structure presented in Ref. [1]) and a Omega-FinFET (similar to structures presented in Refs. [2,3]). TCAD simulations of the full process flow as well as of the electrical device characteristics are performed. We also show examples of 3D oxidation simulations with Sentaurus Process.</abstract><pub>IEEE</pub><doi>10.1109/UGIM.2006.4286350</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0749-6877 |
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| issn | 0749-6877 2375-5350 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Boron Etching Implants Material properties MOSFET circuits Robustness Shadow mapping Stress Tellurium |
| title | Three-dimensional TCAD Process and Device Simulations |
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