Three-dimensional TCAD Process and Device Simulations

Three-dimensional TCAD Process and Device Simulations

Shrinking feature sizes, novel device designs as well as stress engineering increase the need for three- dimensional process and device simulations. We present several application examples for full 3D process and device simulations using Sentaurus TCAD, including a 3D NMOSFET with shallow trench iso...

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Hauptverfasser: Avci, I., Balasingam, P., Sayed, K.E., Gharib, J., Johnson, M.D., Kells, K., Kiralyfalvi, G., Koltyzhenkov, V., Kucherov, A., Lyumkis, E., Penzin, O., Polsky, B., Rao, V., Simeonov, S.D., Strecker, N., Tan, Z., Villablanca, L., Fichtner, W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Boron
Etching
Implants
Material properties
MOSFET circuits
Robustness
Shadow mapping
Stress
Tellurium
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Beschreibung
Zusammenfassung:Shrinking feature sizes, novel device designs as well as stress engineering increase the need for three- dimensional process and device simulations. We present several application examples for full 3D process and device simulations using Sentaurus TCAD, including a 3D NMOSFET with shallow trench isolations (STI), a PMOSFET device with SiGe pockets for stress engineering (similar to the structure presented in Ref. [1]) and a Omega-FinFET (similar to structures presented in Refs. [2,3]). TCAD simulations of the full process flow as well as of the electrical device characteristics are performed. We also show examples of 3D oxidation simulations with Sentaurus Process.
ISSN:0749-6877
2375-5350
DOI:10.1109/UGIM.2006.4286350