Determination of Activated Dopant Profiles with a Novel FastGate® Probe

Determination of Activated Dopant Profiles with a Novel FastGate® Probe

A novel technique has been developed that can provide activated dopant profiling of USJ structures without complicated Poisson based corrections. The technique has been demonstrated on USJ layers as thin as 25 nm. The value of this measurement technique is that it removes any consideration of mobili...

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Bibliographische Detailangaben
Hauptverfasser: Hillard, R.J., Ye, C.W., Benjamin, M.C., Suguro, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Capacitance-voltage characteristics
Charge carrier density
Contacts
Electrical resistance measurement
MOSFETs
Probes
Shape
Solid state circuits
Testing
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Beschreibung
Zusammenfassung:A novel technique has been developed that can provide activated dopant profiling of USJ structures without complicated Poisson based corrections. The technique has been demonstrated on USJ layers as thin as 25 nm. The value of this measurement technique is that it removes any consideration of mobility variation and allows one to focus on the electrically activated dopant. As the shape of the profile can affect device performance, this measurement will allow for optimal process development.
DOI:10.1109/IWJT.2007.4279943