Dual-Pearson Parameter Extraction for In Tilt Implantation

Indium depth profiles were obtained for various energies and tilt angles to provide precise dual Pearson parameter data set. Dual Pearson model can reproduce an In profile with channeling tail. The obtained data set is available with commercial TCAD tools.

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Bibliographische Detailangaben
Hauptverfasser:	Shibahara, K., Eto, T., Fukunaga, T.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Crystallization Data mining Indium Ion implantation Nuclear electronics Parameter extraction Probability distribution Semiconductor device modeling Semiconductor process modeling Tail
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Beschreibung
Zusammenfassung:	Indium depth profiles were obtained for various energies and tilt angles to provide precise dual Pearson parameter data set. Dual Pearson model can reproduce an In profile with channeling tail. The obtained data set is available with commercial TCAD tools.
DOI:	10.1109/IWJT.2007.4279938