Soft Error Rates in 65nm SRAMs--Analysis of new Phenomena

Soft error rates measured on embedded SRAMs in a 65 nm CMOS technology show a significant increase of the error rate induced by neutron radiation (NSER), while the number of soft errors due to alpha radiation (ASER) is within the expected range. In this paper it will be discussed, that the increase...

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Bibliographische Detailangaben
Hauptverfasser:	Ruckerbauer, F.X., Georgakos, G.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	ASER Bipolar transistors CMOS CMOS technology Error analysis Ionizing radiation Logic testing multi-bit Neutrons NSER Random access memory Read-write memory SEU Single event upset soft errors and radiation SRAM upset Voltage
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