Soft Error Rates in 65nm SRAMs--Analysis of new Phenomena

Soft Error Rates in 65nm SRAMs--Analysis of new Phenomena

Soft error rates measured on embedded SRAMs in a 65 nm CMOS technology show a significant increase of the error rate induced by neutron radiation (NSER), while the number of soft errors due to alpha radiation (ASER) is within the expected range. In this paper it will be discussed, that the increase...

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Bibliographische Detailangaben
Hauptverfasser: Ruckerbauer, F.X., Georgakos, G.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
ASER
Bipolar transistors
CMOS
CMOS technology
Error analysis
Ionizing radiation
Logic testing
multi-bit
Neutrons
NSER
Random access memory
Read-write memory
SEU
Single event upset
soft errors and radiation
SRAM
upset
Voltage
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Zusammenfassung:Soft error rates measured on embedded SRAMs in a 65 nm CMOS technology show a significant increase of the error rate induced by neutron radiation (NSER), while the number of soft errors due to alpha radiation (ASER) is within the expected range. In this paper it will be discussed, that the increase of the NSER values is caused by an unexpected high number of single event upsets (SEU) that flip multiple SRAM cells simultaneously (multi-bit upset). As root cause radiation induced switching of parasitic bipolar transistors was found.
ISSN:1942-9398
1942-9401
DOI:10.1109/IOLTS.2007.60