Influence of gate geometry in integrated MOS varactors on accumulation mode for RF

Influence of gate geometry in integrated MOS varactors on accumulation mode for RF

Driven by the many applications that varactors have in RF integrated blocks, this work analyzes the influence of gate geometry (width and length) on integrated accumulation MOS varactors. For this purpose, a number of varactors have been designed and fabricated on a 0.8 μm CMOS standard technology....

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Hauptverfasser: Amselem, E., Gonzalez, B., Garcia, J., Aldea, I., Marrero, M., Iturri, A.G., del Pino, J., Khemchandani, S.L., Hernandez, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance measurement
Circuit simulation
CMOS technology
Fabrication
Geometry
integrated circuit
Integrated circuit measurements
MOS
Q factor
Radio frequency
varactor
Varactors
Voltage
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Beschreibung
Zusammenfassung:Driven by the many applications that varactors have in RF integrated blocks, this work analyzes the influence of gate geometry (width and length) on integrated accumulation MOS varactors. For this purpose, a number of varactors have been designed and fabricated on a 0.8 μm CMOS standard technology. The most relevant parameters: quality factor, tuning range, and capacitance, are simulated and compared against measurements. Some design considerations are reported.
ISSN:2163-4971
2643-1300
DOI:10.1109/SCED.2007.383997