A New Noise Parameter Model of Short-Channel MOSFETs

A New Noise Parameter Model of Short-Channel MOSFETs

In this paper, a closed form expression for noise parameters of MOSFETs are derived from a more accurate small-signal equivalent circuit. The modeling results show a good agreement with the measured data. Based on the analysis of the noise coming from channel thermal noise and parasitic resistances,...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Jongwook Jeon, Ickhyun Song, In Man Kang, Yeonam Yun, Byung-Gook Park, Jong Duk Lee, Hyungcheol Shin
Format: Tagungsbericht
Sprache:eng
Schlagworte:
analytical modeling
Analytical models
channel thermal noise
Circuit noise
Electrical resistance measurement
Equivalent circuits
induced gate noise
MOSFETs
Noise measurement
noise parameters
Optimized production technology
Radio frequency
RF MOSFET
Thermal conductivity
Thermal resistance
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this paper, a closed form expression for noise parameters of MOSFETs are derived from a more accurate small-signal equivalent circuit. The modeling results show a good agreement with the measured data. Based on the analysis of the noise coming from channel thermal noise and parasitic resistances, the noise contribution from each component is analyzed.
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2007.380964