30 GHz CMOS Low Noise Amplifier

30 GHz low noise amplifier was designed and fabricated in a 90nm digital CMOS process. The mm-wave amplifier has a peak gain of 20 dB at 28.5 GHz and a 3dB bandwidth of 2.6 GHz with the input and output matching better than 12 dB and 17 dB over the entire band respectively. The NF is 2.9 dB at 28 GH...

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Bibliographische Detailangaben

Hauptverfasser:	Adabi, E., Heydari, B., Bohsali, M., Niknejad, A.M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Circuit noise CMOS Low Noise Amplifier (LNA) CMOS mm-wave Amplifier CMOS process CMOS technology Frequency Inductors Insulation Low-noise amplifiers MIM capacitors Round-Table Transistor Semiconductor device modeling Transistors
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