30 GHz CMOS Low Noise Amplifier

30 GHz CMOS Low Noise Amplifier

30 GHz low noise amplifier was designed and fabricated in a 90nm digital CMOS process. The mm-wave amplifier has a peak gain of 20 dB at 28.5 GHz and a 3dB bandwidth of 2.6 GHz with the input and output matching better than 12 dB and 17 dB over the entire band respectively. The NF is 2.9 dB at 28 GH...

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Bibliographische Detailangaben
Hauptverfasser: Adabi, E., Heydari, B., Bohsali, M., Niknejad, A.M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuit noise
CMOS Low Noise Amplifier (LNA)
CMOS mm-wave Amplifier
CMOS process
CMOS technology
Frequency
Inductors
Insulation
Low-noise amplifiers
MIM capacitors
Round-Table Transistor
Semiconductor device modeling
Transistors
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Beschreibung
Zusammenfassung:30 GHz low noise amplifier was designed and fabricated in a 90nm digital CMOS process. The mm-wave amplifier has a peak gain of 20 dB at 28.5 GHz and a 3dB bandwidth of 2.6 GHz with the input and output matching better than 12 dB and 17 dB over the entire band respectively. The NF is 2.9 dB at 28 GHz and less than 4.2 dB across the band and it can deliver 2 dBm of power to a matched load at its 1 dB compression point. The amplifier has a measured linearity of IIIP3= -7.5 dBm. It consumes 16.25 mW of power using a low supply voltage of 1 V and occupies an area (excluding the pads) of 1600 μ m x 420 μ m.
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2007.380961