30 GHz CMOS Low Noise Amplifier
30 GHz low noise amplifier was designed and fabricated in a 90nm digital CMOS process. The mm-wave amplifier has a peak gain of 20 dB at 28.5 GHz and a 3dB bandwidth of 2.6 GHz with the input and output matching better than 12 dB and 17 dB over the entire band respectively. The NF is 2.9 dB at 28 GH...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 628 |
|---|---|
| container_issue | |
| container_start_page | 625 |
| container_title | |
| container_volume | |
| creator | Adabi, E. Heydari, B. Bohsali, M. Niknejad, A.M. |
| description | 30 GHz low noise amplifier was designed and fabricated in a 90nm digital CMOS process. The mm-wave amplifier has a peak gain of 20 dB at 28.5 GHz and a 3dB bandwidth of 2.6 GHz with the input and output matching better than 12 dB and 17 dB over the entire band respectively. The NF is 2.9 dB at 28 GHz and less than 4.2 dB across the band and it can deliver 2 dBm of power to a matched load at its 1 dB compression point. The amplifier has a measured linearity of IIIP3= -7.5 dBm. It consumes 16.25 mW of power using a low supply voltage of 1 V and occupies an area (excluding the pads) of 1600 μ m x 420 μ m. |
| doi_str_mv | 10.1109/RFIC.2007.380961 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4266509</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4266509</ieee_id><sourcerecordid>4266509</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-e535762175458dddfeaa309b3fca494a83fd393b77fbb74df1253b54e55084853</originalsourceid><addsrcrecordid>eNpVjMtKw0AUQMcXGGv3ggvzA0nvnTs3M3dZQl8QW_CxLhMzAyMtLYkg-vUWdOPqHDhwlLpDKBFBJk_zVV1qAFuSA6nwTI3FOjTaGGBCfa4yTZYLEOGLfw34UmXIWgrNaK_VzTC8w2mElWTqgSBfLL_z-nHznDeHz3x9SEPIp_vjLsUU-lt1Ff1uCOM_jtTrfPZSL4tms1jV06ZIaPmjCExsK31yw67ruhi8J5CW4ps3Yryj2JFQa21sW2u6iJqpZROYwRnHNFL3v98UQtge-7T3_dfW6KpiEPoBmkU_jg</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>30 GHz CMOS Low Noise Amplifier</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Adabi, E. ; Heydari, B. ; Bohsali, M. ; Niknejad, A.M.</creator><creatorcontrib>Adabi, E. ; Heydari, B. ; Bohsali, M. ; Niknejad, A.M.</creatorcontrib><description>30 GHz low noise amplifier was designed and fabricated in a 90nm digital CMOS process. The mm-wave amplifier has a peak gain of 20 dB at 28.5 GHz and a 3dB bandwidth of 2.6 GHz with the input and output matching better than 12 dB and 17 dB over the entire band respectively. The NF is 2.9 dB at 28 GHz and less than 4.2 dB across the band and it can deliver 2 dBm of power to a matched load at its 1 dB compression point. The amplifier has a measured linearity of IIIP3= -7.5 dBm. It consumes 16.25 mW of power using a low supply voltage of 1 V and occupies an area (excluding the pads) of 1600 μ m x 420 μ m.</description><identifier>ISSN: 1529-2517</identifier><identifier>ISBN: 9781424405305</identifier><identifier>ISBN: 1424405300</identifier><identifier>EISSN: 2375-0995</identifier><identifier>EISBN: 9781424405312</identifier><identifier>EISBN: 1424405319</identifier><identifier>DOI: 10.1109/RFIC.2007.380961</identifier><language>eng</language><publisher>IEEE</publisher><subject>Circuit noise ; CMOS Low Noise Amplifier (LNA) ; CMOS mm-wave Amplifier ; CMOS process ; CMOS technology ; Frequency ; Inductors ; Insulation ; Low-noise amplifiers ; MIM capacitors ; Round-Table Transistor ; Semiconductor device modeling ; Transistors</subject><ispartof>2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2007, p.625-628</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4266509$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4266509$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Adabi, E.</creatorcontrib><creatorcontrib>Heydari, B.</creatorcontrib><creatorcontrib>Bohsali, M.</creatorcontrib><creatorcontrib>Niknejad, A.M.</creatorcontrib><title>30 GHz CMOS Low Noise Amplifier</title><title>2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium</title><addtitle>RFIC</addtitle><description>30 GHz low noise amplifier was designed and fabricated in a 90nm digital CMOS process. The mm-wave amplifier has a peak gain of 20 dB at 28.5 GHz and a 3dB bandwidth of 2.6 GHz with the input and output matching better than 12 dB and 17 dB over the entire band respectively. The NF is 2.9 dB at 28 GHz and less than 4.2 dB across the band and it can deliver 2 dBm of power to a matched load at its 1 dB compression point. The amplifier has a measured linearity of IIIP3= -7.5 dBm. It consumes 16.25 mW of power using a low supply voltage of 1 V and occupies an area (excluding the pads) of 1600 μ m x 420 μ m.</description><subject>Circuit noise</subject><subject>CMOS Low Noise Amplifier (LNA)</subject><subject>CMOS mm-wave Amplifier</subject><subject>CMOS process</subject><subject>CMOS technology</subject><subject>Frequency</subject><subject>Inductors</subject><subject>Insulation</subject><subject>Low-noise amplifiers</subject><subject>MIM capacitors</subject><subject>Round-Table Transistor</subject><subject>Semiconductor device modeling</subject><subject>Transistors</subject><issn>1529-2517</issn><issn>2375-0995</issn><isbn>9781424405305</isbn><isbn>1424405300</isbn><isbn>9781424405312</isbn><isbn>1424405319</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVjMtKw0AUQMcXGGv3ggvzA0nvnTs3M3dZQl8QW_CxLhMzAyMtLYkg-vUWdOPqHDhwlLpDKBFBJk_zVV1qAFuSA6nwTI3FOjTaGGBCfa4yTZYLEOGLfw34UmXIWgrNaK_VzTC8w2mElWTqgSBfLL_z-nHznDeHz3x9SEPIp_vjLsUU-lt1Ff1uCOM_jtTrfPZSL4tms1jV06ZIaPmjCExsK31yw67ruhi8J5CW4ps3Yryj2JFQa21sW2u6iJqpZROYwRnHNFL3v98UQtge-7T3_dfW6KpiEPoBmkU_jg</recordid><startdate>200706</startdate><enddate>200706</enddate><creator>Adabi, E.</creator><creator>Heydari, B.</creator><creator>Bohsali, M.</creator><creator>Niknejad, A.M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200706</creationdate><title>30 GHz CMOS Low Noise Amplifier</title><author>Adabi, E. ; Heydari, B. ; Bohsali, M. ; Niknejad, A.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-e535762175458dddfeaa309b3fca494a83fd393b77fbb74df1253b54e55084853</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Circuit noise</topic><topic>CMOS Low Noise Amplifier (LNA)</topic><topic>CMOS mm-wave Amplifier</topic><topic>CMOS process</topic><topic>CMOS technology</topic><topic>Frequency</topic><topic>Inductors</topic><topic>Insulation</topic><topic>Low-noise amplifiers</topic><topic>MIM capacitors</topic><topic>Round-Table Transistor</topic><topic>Semiconductor device modeling</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Adabi, E.</creatorcontrib><creatorcontrib>Heydari, B.</creatorcontrib><creatorcontrib>Bohsali, M.</creatorcontrib><creatorcontrib>Niknejad, A.M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Adabi, E.</au><au>Heydari, B.</au><au>Bohsali, M.</au><au>Niknejad, A.M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>30 GHz CMOS Low Noise Amplifier</atitle><btitle>2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium</btitle><stitle>RFIC</stitle><date>2007-06</date><risdate>2007</risdate><spage>625</spage><epage>628</epage><pages>625-628</pages><issn>1529-2517</issn><eissn>2375-0995</eissn><isbn>9781424405305</isbn><isbn>1424405300</isbn><eisbn>9781424405312</eisbn><eisbn>1424405319</eisbn><abstract>30 GHz low noise amplifier was designed and fabricated in a 90nm digital CMOS process. The mm-wave amplifier has a peak gain of 20 dB at 28.5 GHz and a 3dB bandwidth of 2.6 GHz with the input and output matching better than 12 dB and 17 dB over the entire band respectively. The NF is 2.9 dB at 28 GHz and less than 4.2 dB across the band and it can deliver 2 dBm of power to a matched load at its 1 dB compression point. The amplifier has a measured linearity of IIIP3= -7.5 dBm. It consumes 16.25 mW of power using a low supply voltage of 1 V and occupies an area (excluding the pads) of 1600 μ m x 420 μ m.</abstract><pub>IEEE</pub><doi>10.1109/RFIC.2007.380961</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1529-2517 |
| ispartof | 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2007, p.625-628 |
| issn | 1529-2517 2375-0995 |
| language | eng |
| recordid | cdi_ieee_primary_4266509 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Circuit noise CMOS Low Noise Amplifier (LNA) CMOS mm-wave Amplifier CMOS process CMOS technology Frequency Inductors Insulation Low-noise amplifiers MIM capacitors Round-Table Transistor Semiconductor device modeling Transistors |
| title | 30 GHz CMOS Low Noise Amplifier |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T11%3A30%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=30%20GHz%20CMOS%20Low%20Noise%20Amplifier&rft.btitle=2007%20IEEE%20Radio%20Frequency%20Integrated%20Circuits%20(RFIC)%20Symposium&rft.au=Adabi,%20E.&rft.date=2007-06&rft.spage=625&rft.epage=628&rft.pages=625-628&rft.issn=1529-2517&rft.eissn=2375-0995&rft.isbn=9781424405305&rft.isbn_list=1424405300&rft_id=info:doi/10.1109/RFIC.2007.380961&rft_dat=%3Cieee_6IE%3E4266509%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424405312&rft.eisbn_list=1424405319&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4266509&rfr_iscdi=true |