High Gain G-Band MMIC Amplifiers Based on Sub-50 nm Gate Length InP HEMT

We have recently developed a sub-50nm gate length InP HEMT (high electron mobility transistor) process with a peak transconductance of 2000 mS/mm at 1V. A 3-stage single-ended common source 150-220 GHz MMIC LNA demonstrates greater than 20 dB gain at 200 GHz (> 7 dB gain per stage) and is >5 d...

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Hauptverfasser:	Liu, P.H., Yoshida, W., Lee, J., Dang, L., Wang, J., Liu, W., Uyeda, J., Li, D., Mei, X.B., Deal, W., Barsky, M., Kim, Y.M., Lange, M., Chin, T.P., Radisic, V., Gaier, T., Fung, A., Lai, R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electric variables measurement Frequency Gain HEMTs Indium phosphide MMICs Resists Space technology Testing
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