High Gain G-Band MMIC Amplifiers Based on Sub-50 nm Gate Length InP HEMT

High Gain G-Band MMIC Amplifiers Based on Sub-50 nm Gate Length InP HEMT

We have recently developed a sub-50nm gate length InP HEMT (high electron mobility transistor) process with a peak transconductance of 2000 mS/mm at 1V. A 3-stage single-ended common source 150-220 GHz MMIC LNA demonstrates greater than 20 dB gain at 200 GHz (> 7 dB gain per stage) and is >5 d...

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Hauptverfasser: Liu, P.H., Yoshida, W., Lee, J., Dang, L., Wang, J., Liu, W., Uyeda, J., Li, D., Mei, X.B., Deal, W., Barsky, M., Kim, Y.M., Lange, M., Chin, T.P., Radisic, V., Gaier, T., Fung, A., Lai, R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electric variables measurement
Frequency
Gain
HEMTs
Indium phosphide
MMICs
Resists
Space technology
Testing
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Beschreibung
Zusammenfassung:We have recently developed a sub-50nm gate length InP HEMT (high electron mobility transistor) process with a peak transconductance of 2000 mS/mm at 1V. A 3-stage single-ended common source 150-220 GHz MMIC LNA demonstrates greater than 20 dB gain at 200 GHz (> 7 dB gain per stage) and is >5 dB higher LNA gain compared to the same MMIC design fabricated on our baselined 70 nm gate length InP HEMT MMIC process. To our knowledge, this is the highest amplifier gain per stage achieved at this frequency range.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2007.380679