Inductorless Broadband RF Front-End Using 2 um GaInP/GaAs HBT Technology

Inductorless Broadband RF Front-End Using 2 um GaInP/GaAs HBT Technology

A GalnP/GaAs HBT broadband RF front-end consisting of a low noise wideband amplifier and a micromixer is demonstrated in this paper. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The mea...

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Bibliographische Detailangaben
Hauptverfasser: Tzung-Han Wu, Chinchun Meng, Guo-Wei Huang
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bandwidth
Broadband amplifiers
Gain measurement
GaInP/GaAs HBT
Gallium arsenide
Gilbert mixer
Heterojunction bipolar transistors
Inductors
Micromixer
Noise figure
Noise measurement
Radio frequency
Semiconductor device measurement
Wideband amplifier
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Beschreibung
Zusammenfassung:A GalnP/GaAs HBT broadband RF front-end consisting of a low noise wideband amplifier and a micromixer is demonstrated in this paper. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 GHz to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2007.380347