Ultra sensitive ErAs/InAlGaAs direct detectors for millimeter wave and THz imaging applications

A new class of zero bias, room temperature ultra sensitive detectors have been introduced for detection of millimeter wave radiation. The detectors have been scaled to micron level and have shown record responsivity in three forms. A W-band waveguide detector was designed and measured to have 4500 V...

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Bibliographische Detailangaben
Hauptverfasser: Kazemi, H., Nagy, G., Tran, L., Grossman, E., Brown, E.R., Gossard, A.C., Boreman, G.D., Lail, B., Young, A.C., Zimmerman, J.D.
Format: Tagungsbericht
Sprache:eng
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Beschreibung
Zusammenfassung:A new class of zero bias, room temperature ultra sensitive detectors have been introduced for detection of millimeter wave radiation. The detectors have been scaled to micron level and have shown record responsivity in three forms. A W-band waveguide detector was designed and measured to have 4500 V/W voltage responsivity. A planar antenna coupled detector was also evaluated with and measured a responsivity 16100 V-mm 2 /W from 75-110 GHz. Following a resonant impedance matching technique an on-wafer characterization have shown voltage responsivity to exceed 20,000 V/W. The result does not include the reflected power from the detector and have shown that these detectors could provide noise equivalent power (NEP) values in the 4times10 -13 W/ radicHz level.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2007.380467