A 80W 2-stage GaN HEMT Doherty Amplifier with 50dBc ACLR, 42% Efficiency 32dB Gain with DPD for W-CDMA Base station

A 80W 2-stage GaN HEMT Doherty Amplifier with 50dBc ACLR, 42% Efficiency 32dB Gain with DPD for W-CDMA Base station

A 2-stage 80 W amplifier, which consists of a 450 W saturated power GaN HEMT Doherty amplifier and a 30 W driver, was developed. At first we developed the 450 W GaN HEMT Doherty amplifier and obtained saturation power of 56.5 dBm(450 W) and drain efficiency of 55% at 6 dB back-off power showing typi...

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Bibliographische Detailangaben
Hauptverfasser: Ui, N., Sano, H., Sano, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Base stations
Circuit simulation
digital pre-distortion(DPD)
Doherty
Driver circuits
Gallium nitride
GaN HEMT
HEMTs
Multiaccess communication
Peak to average power ratio
Power amplifiers
Pulse amplifiers
Radiofrequency amplifiers
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Beschreibung
Zusammenfassung:A 2-stage 80 W amplifier, which consists of a 450 W saturated power GaN HEMT Doherty amplifier and a 30 W driver, was developed. At first we developed the 450 W GaN HEMT Doherty amplifier and obtained saturation power of 56.5 dBm(450 W) and drain efficiency of 55% at 6 dB back-off power showing typical Doherty amplifier behavior. Then we built the 2-stage amplifier up with the 30 W driver stage amplifier. With this amplifier we obtained 42% efficiency (including 30 W driver amplifier) and -50 dBc ACLR at the average power of 49 dBm(80 W) with saturation power of 56.5 dBm and Gain of 32 dB.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2007.380421