A 2.5 Watt 3.3-3.9 GHz Power Amplifier for WiMAX Applications using a GaN HEMT in a Small Surface-Mount Package
A 2.5 watt average power (15 watt peak power) amplifier for application with WiMAX signal protocols has been constructed using small surface-mount GaN HEMT transistors. The GaN HEMT characteristics are uniquely suitable for producing high peak power in very small (3times3 mm) surface-mount packages....
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| creator | Crescenzi, E.J. Wood, S.M. Prejs, A. Pengelly, R.S. Pribble, W. |
| description | A 2.5 watt average power (15 watt peak power) amplifier for application with WiMAX signal protocols has been constructed using small surface-mount GaN HEMT transistors. The GaN HEMT characteristics are uniquely suitable for producing high peak power in very small (3times3 mm) surface-mount packages. The PA produces 12.5 dB of gain over 3.3-3.9 GHz, with EVM under 2.5% with 2.5 watts average output. A design methodology for optimizing performance for the WiMAX protocol is presented. |
| doi_str_mv | 10.1109/MWSYM.2007.380288 |
| format | Conference Proceeding |
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A design methodology for optimizing performance for the WiMAX protocol is presented.</description><subject>Costs</subject><subject>Gallium nitride</subject><subject>Gallium Nitride HEMT</subject><subject>HEMTs</subject><subject>Packaging</subject><subject>Power amplifier</subject><subject>Power amplifiers</subject><subject>Printed circuits</subject><subject>Protocols</subject><subject>surface-mount package</subject><subject>Thermal conductivity</subject><subject>Thermal resistance</subject><subject>WiMAX</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>1424406870</isbn><isbn>9781424406876</isbn><isbn>1424406889</isbn><isbn>9781424406883</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFj9tKw0AURccbWGs_QHw5P5B45pKZyWMo2gqNFlpofSonyaSMpklJUkS_3oCCT_uyYMNm7I5jyDnGD-lm9ZaGAtGE0qKw9ozdcCWUQm1tfM5GIjI6MILri39g8JKNkKs40CraXrNJ170jIjdacWNGrElAhBFsqO9BhjKQYQyz-Tcsm0_XQnI4Vr70gyubFjY-TbaQHIcup943dQenztd7IJjRC8wf0zX4ekirA1UVrE5tSbkL0uZU97Ck_IP27pZdlVR1bvKnY7Z-elxP58HidfY8TRaBj7EPCpE7Isp0JnIrTaGtEjKm4ZvEzAmlTaGkHRhlxtpc28jGWhdFZkrKkHI5Zve_s945tzu2_kDt104JrVAI-QOePFo-</recordid><startdate>200706</startdate><enddate>200706</enddate><creator>Crescenzi, E.J.</creator><creator>Wood, S.M.</creator><creator>Prejs, A.</creator><creator>Pengelly, R.S.</creator><creator>Pribble, W.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200706</creationdate><title>A 2.5 Watt 3.3-3.9 GHz Power Amplifier for WiMAX Applications using a GaN HEMT in a Small Surface-Mount Package</title><author>Crescenzi, E.J. ; Wood, S.M. ; Prejs, A. ; Pengelly, R.S. ; Pribble, W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-d2ceaaab6b2c837d684239a72130be2467d4382c8ab788c6858966ddb7fab0ac3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Costs</topic><topic>Gallium nitride</topic><topic>Gallium Nitride HEMT</topic><topic>HEMTs</topic><topic>Packaging</topic><topic>Power amplifier</topic><topic>Power amplifiers</topic><topic>Printed circuits</topic><topic>Protocols</topic><topic>surface-mount package</topic><topic>Thermal conductivity</topic><topic>Thermal resistance</topic><topic>WiMAX</topic><toplevel>online_resources</toplevel><creatorcontrib>Crescenzi, E.J.</creatorcontrib><creatorcontrib>Wood, S.M.</creatorcontrib><creatorcontrib>Prejs, A.</creatorcontrib><creatorcontrib>Pengelly, R.S.</creatorcontrib><creatorcontrib>Pribble, W.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEL</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Crescenzi, E.J.</au><au>Wood, S.M.</au><au>Prejs, A.</au><au>Pengelly, R.S.</au><au>Pribble, W.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A 2.5 Watt 3.3-3.9 GHz Power Amplifier for WiMAX Applications using a GaN HEMT in a Small Surface-Mount Package</atitle><btitle>2007 IEEE/MTT-S International Microwave Symposium</btitle><stitle>MWSYM</stitle><date>2007-06</date><risdate>2007</risdate><spage>1111</spage><epage>1114</epage><pages>1111-1114</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>1424406870</isbn><isbn>9781424406876</isbn><eisbn>1424406889</eisbn><eisbn>9781424406883</eisbn><abstract>A 2.5 watt average power (15 watt peak power) amplifier for application with WiMAX signal protocols has been constructed using small surface-mount GaN HEMT transistors. The GaN HEMT characteristics are uniquely suitable for producing high peak power in very small (3times3 mm) surface-mount packages. The PA produces 12.5 dB of gain over 3.3-3.9 GHz, with EVM under 2.5% with 2.5 watts average output. A design methodology for optimizing performance for the WiMAX protocol is presented.</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.2007.380288</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 0149-645X |
| ispartof | 2007 IEEE/MTT-S International Microwave Symposium, 2007, p.1111-1114 |
| issn | 0149-645X 2576-7216 |
| language | eng |
| recordid | cdi_ieee_primary_4264022 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Costs Gallium nitride Gallium Nitride HEMT HEMTs Packaging Power amplifier Power amplifiers Printed circuits Protocols surface-mount package Thermal conductivity Thermal resistance WiMAX |
| title | A 2.5 Watt 3.3-3.9 GHz Power Amplifier for WiMAX Applications using a GaN HEMT in a Small Surface-Mount Package |
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