A 2.5 Watt 3.3-3.9 GHz Power Amplifier for WiMAX Applications using a GaN HEMT in a Small Surface-Mount Package

A 2.5 watt average power (15 watt peak power) amplifier for application with WiMAX signal protocols has been constructed using small surface-mount GaN HEMT transistors. The GaN HEMT characteristics are uniquely suitable for producing high peak power in very small (3times3 mm) surface-mount packages....

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Hauptverfasser: Crescenzi, E.J., Wood, S.M., Prejs, A., Pengelly, R.S., Pribble, W.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:A 2.5 watt average power (15 watt peak power) amplifier for application with WiMAX signal protocols has been constructed using small surface-mount GaN HEMT transistors. The GaN HEMT characteristics are uniquely suitable for producing high peak power in very small (3times3 mm) surface-mount packages. The PA produces 12.5 dB of gain over 3.3-3.9 GHz, with EVM under 2.5% with 2.5 watts average output. A design methodology for optimizing performance for the WiMAX protocol is presented.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2007.380288