A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65% PAE
A class-E amplifier in the 2 GHz band is presented. It is realized as a coplanar MMIC using a high-voltage GaAs-HBT process. At 37 dBm output power, a high PAE of 65% with 71% collector efficiency are achieved. The gain of the amplifier in the switch-mode region reaches 11 dB. These are very competi...
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| creator | Meliani, C. Rudolph, M. Kurpas, P. Schmidt, L. Rheinfelder, C.N. Heinrich, W. |
| description | A class-E amplifier in the 2 GHz band is presented. It is realized as a coplanar MMIC using a high-voltage GaAs-HBT process. At 37 dBm output power, a high PAE of 65% with 71% collector efficiency are achieved. The gain of the amplifier in the switch-mode region reaches 11 dB. These are very competitive values for PAE, collector efficiency, and output power and the highest ones using GaAs-HBT technology. The measured data is supported by in-depth circuit simulation results highlighting the special conditions and requirements of switch-mode operation. |
| doi_str_mv | 10.1109/MWSYM.2007.380282 |
| format | Conference Proceeding |
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The measured data is supported by in-depth circuit simulation results highlighting the special conditions and requirements of switch-mode operation.</description><subject>Circuit simulation</subject><subject>Circuit synthesis</subject><subject>class-E</subject><subject>Electrical resistance measurement</subject><subject>Epitaxial growth</subject><subject>GaAs</subject><subject>Gallium arsenide</subject><subject>HBT</subject><subject>Heterojunction bipolar transistors</subject><subject>MMICs</subject><subject>PAE</subject><subject>power amplifier</subject><subject>Power amplifiers</subject><subject>Power generation</subject><subject>Switching circuits</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>1424406870</isbn><isbn>9781424406876</isbn><isbn>1424406889</isbn><isbn>9781424406883</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFjktLw0AURscXGGt_gLiZjcuJd27muYwhJoUGBQPqqkziDUZSKJ2C6K83oODqLL7Dx2HsSkIqJfjb5vnptUkRwKaZA3R4xC6kQqXAOOePWYLaGmFRmpP_wcIpS0AqL4zSL-dsGeMHAEhrlLQ2YSbnmCpe1d-8CnkU9V3LiynEKEreNKuC59vdNA4j7fnneHjnRt_wx7y8ZGdDmCIt_7hg7X3ZFrVYP1SrIl-L0cNB9GAyjzZY6XpCFbD3Gqg3WmakSLpBDdiBR0J8k7NqHKHt_BytLXXaZwt2_Xs7EtFmtx-3Yf-1UWgUzP4PtkVERw</recordid><startdate>200706</startdate><enddate>200706</enddate><creator>Meliani, C.</creator><creator>Rudolph, M.</creator><creator>Kurpas, P.</creator><creator>Schmidt, L.</creator><creator>Rheinfelder, C.N.</creator><creator>Heinrich, W.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200706</creationdate><title>A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65% PAE</title><author>Meliani, C. ; Rudolph, M. ; Kurpas, P. ; Schmidt, L. ; Rheinfelder, C.N. ; Heinrich, W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-c063927a718ce24a2c950ec6513e4e18f4f2b092e22d163968e27b987057eb593</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Circuit simulation</topic><topic>Circuit synthesis</topic><topic>class-E</topic><topic>Electrical resistance measurement</topic><topic>Epitaxial growth</topic><topic>GaAs</topic><topic>Gallium arsenide</topic><topic>HBT</topic><topic>Heterojunction bipolar transistors</topic><topic>MMICs</topic><topic>PAE</topic><topic>power amplifier</topic><topic>Power amplifiers</topic><topic>Power generation</topic><topic>Switching circuits</topic><toplevel>online_resources</toplevel><creatorcontrib>Meliani, C.</creatorcontrib><creatorcontrib>Rudolph, M.</creatorcontrib><creatorcontrib>Kurpas, P.</creatorcontrib><creatorcontrib>Schmidt, L.</creatorcontrib><creatorcontrib>Rheinfelder, C.N.</creatorcontrib><creatorcontrib>Heinrich, W.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Meliani, C.</au><au>Rudolph, M.</au><au>Kurpas, P.</au><au>Schmidt, L.</au><au>Rheinfelder, C.N.</au><au>Heinrich, W.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65% PAE</atitle><btitle>2007 IEEE/MTT-S International Microwave Symposium</btitle><stitle>MWSYM</stitle><date>2007-06</date><risdate>2007</risdate><spage>1087</spage><epage>1090</epage><pages>1087-1090</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>1424406870</isbn><isbn>9781424406876</isbn><eisbn>1424406889</eisbn><eisbn>9781424406883</eisbn><abstract>A class-E amplifier in the 2 GHz band is presented. It is realized as a coplanar MMIC using a high-voltage GaAs-HBT process. At 37 dBm output power, a high PAE of 65% with 71% collector efficiency are achieved. The gain of the amplifier in the switch-mode region reaches 11 dB. These are very competitive values for PAE, collector efficiency, and output power and the highest ones using GaAs-HBT technology. The measured data is supported by in-depth circuit simulation results highlighting the special conditions and requirements of switch-mode operation.</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.2007.380282</doi><tpages>4</tpages></addata></record> |
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| ispartof | 2007 IEEE/MTT-S International Microwave Symposium, 2007, p.1087-1090 |
| issn | 0149-645X 2576-7216 |
| language | eng |
| recordid | cdi_ieee_primary_4264016 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Circuit simulation Circuit synthesis class-E Electrical resistance measurement Epitaxial growth GaAs Gallium arsenide HBT Heterojunction bipolar transistors MMICs PAE power amplifier Power amplifiers Power generation Switching circuits |
| title | A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65% PAE |
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