A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65% PAE

A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65% PAE

A class-E amplifier in the 2 GHz band is presented. It is realized as a coplanar MMIC using a high-voltage GaAs-HBT process. At 37 dBm output power, a high PAE of 65% with 71% collector efficiency are achieved. The gain of the amplifier in the switch-mode region reaches 11 dB. These are very competi...

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Bibliographische Detailangaben
Hauptverfasser: Meliani, C., Rudolph, M., Kurpas, P., Schmidt, L., Rheinfelder, C.N., Heinrich, W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuit simulation
Circuit synthesis
class-E
Electrical resistance measurement
Epitaxial growth
GaAs
Gallium arsenide
HBT
Heterojunction bipolar transistors
MMICs
PAE
power amplifier
Power amplifiers
Power generation
Switching circuits
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Beschreibung
Zusammenfassung:A class-E amplifier in the 2 GHz band is presented. It is realized as a coplanar MMIC using a high-voltage GaAs-HBT process. At 37 dBm output power, a high PAE of 65% with 71% collector efficiency are achieved. The gain of the amplifier in the switch-mode region reaches 11 dB. These are very competitive values for PAE, collector efficiency, and output power and the highest ones using GaAs-HBT technology. The measured data is supported by in-depth circuit simulation results highlighting the special conditions and requirements of switch-mode operation.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2007.380282