An X-Band Low Noise InP-HBT VCO with Separate Optimized Varactor Layers
A Colpitts 8 GHz InP heterojunction bipolar transistor (HBT) monolithic voltage controlled oscillator (VCO) with separate varactor layers is presented. The separate and optimized varactor layers were grown underneath the transistor layers. A broad tuning range of 12%, low phase noise of -94 dBc/Hz a...
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| creator | Magrisso, T. Elad, D. Buadana, N. Kraus, S. Elias, D.C. Gavrilov, A. Cohen, S. Ritter, D. |
| description | A Colpitts 8 GHz InP heterojunction bipolar transistor (HBT) monolithic voltage controlled oscillator (VCO) with separate varactor layers is presented. The separate and optimized varactor layers were grown underneath the transistor layers. A broad tuning range of 12%, low phase noise of -94 dBc/Hz at 100 KHz offset frequency, and high linearity of 2% were demonstrated. The VCO power consumption was 30 mW while providing -3 dBm output power. The over all chip size is 1.3times0.8 mm 2 . |
| doi_str_mv | 10.1109/MWSYM.2007.380006 |
| format | Conference Proceeding |
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The over all chip size is 1.3times0.8 mm 2 .</description><subject>Energy consumption</subject><subject>Frequency</subject><subject>Heterojunction bipolar transistor (HBT)</subject><subject>Heterojunction bipolar transistors</subject><subject>Indium phosphide</subject><subject>InP</subject><subject>Linearity</subject><subject>monolithic microwave integrated circuit (MMIC)</subject><subject>oscillator</subject><subject>Phase noise</subject><subject>Power generation</subject><subject>Tuning</subject><subject>varactor</subject><subject>Varactors</subject><subject>voltage-controlled oscillator (VCO)</subject><subject>Voltage-controlled oscillators</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>1424406870</isbn><isbn>9781424406876</isbn><isbn>1424406889</isbn><isbn>9781424406883</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFj91qAjEUhNM_qLU-QOlNXiD2JDl7srlUsSqstaBYeyXZNaEpVZfdBbFP34UWejUwwwzzMfYgoS8l2Kf52_J93lcApq9TAKALdidRIQKlqb1kHZUYEkZJuvoPDFyzDki0gjDZ3LJeXX-2XWkIpTEdNhkc-EYM3WHHs-OJvxxj7fns8CqmwxVfjxb8FJsPvvSlq1zj-aJs4j5--x1ft0bRHCueubOv6nt2E9xX7Xt_2mWr5_FqNBXZYjIbDTIRLTRCpaEoQrCIlAYvwaQGAxWEuQaXJyjdToFtafLgbXuwpciRHOnEkVGJ0132-Dsbvffbsop7V523qEhb0PoHMmFNcw</recordid><startdate>200706</startdate><enddate>200706</enddate><creator>Magrisso, T.</creator><creator>Elad, D.</creator><creator>Buadana, N.</creator><creator>Kraus, S.</creator><creator>Elias, D.C.</creator><creator>Gavrilov, A.</creator><creator>Cohen, S.</creator><creator>Ritter, D.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200706</creationdate><title>An X-Band Low Noise InP-HBT VCO with Separate Optimized Varactor Layers</title><author>Magrisso, T. ; Elad, D. ; Buadana, N. ; Kraus, S. ; Elias, D.C. ; Gavrilov, A. ; Cohen, S. ; Ritter, D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-28fccff94468fe107874f6c64b30ab541ad209889bfe9417142b46a635a6725a3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Energy consumption</topic><topic>Frequency</topic><topic>Heterojunction bipolar transistor (HBT)</topic><topic>Heterojunction bipolar transistors</topic><topic>Indium phosphide</topic><topic>InP</topic><topic>Linearity</topic><topic>monolithic microwave integrated circuit (MMIC)</topic><topic>oscillator</topic><topic>Phase noise</topic><topic>Power generation</topic><topic>Tuning</topic><topic>varactor</topic><topic>Varactors</topic><topic>voltage-controlled oscillator (VCO)</topic><topic>Voltage-controlled oscillators</topic><toplevel>online_resources</toplevel><creatorcontrib>Magrisso, T.</creatorcontrib><creatorcontrib>Elad, D.</creatorcontrib><creatorcontrib>Buadana, N.</creatorcontrib><creatorcontrib>Kraus, S.</creatorcontrib><creatorcontrib>Elias, D.C.</creatorcontrib><creatorcontrib>Gavrilov, A.</creatorcontrib><creatorcontrib>Cohen, S.</creatorcontrib><creatorcontrib>Ritter, D.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Magrisso, T.</au><au>Elad, D.</au><au>Buadana, N.</au><au>Kraus, S.</au><au>Elias, D.C.</au><au>Gavrilov, A.</au><au>Cohen, S.</au><au>Ritter, D.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>An X-Band Low Noise InP-HBT VCO with Separate Optimized Varactor Layers</atitle><btitle>2007 IEEE/MTT-S International Microwave Symposium</btitle><stitle>MWSYM</stitle><date>2007-06</date><risdate>2007</risdate><spage>661</spage><epage>664</epage><pages>661-664</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>1424406870</isbn><isbn>9781424406876</isbn><eisbn>1424406889</eisbn><eisbn>9781424406883</eisbn><abstract>A Colpitts 8 GHz InP heterojunction bipolar transistor (HBT) monolithic voltage controlled oscillator (VCO) with separate varactor layers is presented. The separate and optimized varactor layers were grown underneath the transistor layers. A broad tuning range of 12%, low phase noise of -94 dBc/Hz at 100 KHz offset frequency, and high linearity of 2% were demonstrated. The VCO power consumption was 30 mW while providing -3 dBm output power. The over all chip size is 1.3times0.8 mm 2 .</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.2007.380006</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0149-645X |
| ispartof | 2007 IEEE/MTT-S International Microwave Symposium, 2007, p.661-664 |
| issn | 0149-645X 2576-7216 |
| language | eng |
| recordid | cdi_ieee_primary_4263903 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Energy consumption Frequency Heterojunction bipolar transistor (HBT) Heterojunction bipolar transistors Indium phosphide InP Linearity monolithic microwave integrated circuit (MMIC) oscillator Phase noise Power generation Tuning varactor Varactors voltage-controlled oscillator (VCO) Voltage-controlled oscillators |
| title | An X-Band Low Noise InP-HBT VCO with Separate Optimized Varactor Layers |
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