An X-Band Low Noise InP-HBT VCO with Separate Optimized Varactor Layers

An X-Band Low Noise InP-HBT VCO with Separate Optimized Varactor Layers

A Colpitts 8 GHz InP heterojunction bipolar transistor (HBT) monolithic voltage controlled oscillator (VCO) with separate varactor layers is presented. The separate and optimized varactor layers were grown underneath the transistor layers. A broad tuning range of 12%, low phase noise of -94 dBc/Hz a...

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Hauptverfasser: Magrisso, T., Elad, D., Buadana, N., Kraus, S., Elias, D.C., Gavrilov, A., Cohen, S., Ritter, D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Energy consumption
Frequency
Heterojunction bipolar transistor (HBT)
Heterojunction bipolar transistors
Indium phosphide
InP
Linearity
monolithic microwave integrated circuit (MMIC)
oscillator
Phase noise
Power generation
Tuning
varactor
Varactors
voltage-controlled oscillator (VCO)
Voltage-controlled oscillators
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Beschreibung
Zusammenfassung:A Colpitts 8 GHz InP heterojunction bipolar transistor (HBT) monolithic voltage controlled oscillator (VCO) with separate varactor layers is presented. The separate and optimized varactor layers were grown underneath the transistor layers. A broad tuning range of 12%, low phase noise of -94 dBc/Hz at 100 KHz offset frequency, and high linearity of 2% were demonstrated. The VCO power consumption was 30 mW while providing -3 dBm output power. The over all chip size is 1.3times0.8 mm 2 .
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2007.380006