Design of a 20 GHz Low Loss Ohmic Contact RF MEMS Switch

The design of a 20 GHz RF MEMS switch uses proven elements from previous designs operating from DC to 7 GHz. Extensive analysis of the RF performance of the original switch showed certain bandwidth limitations. Elimination of RF resonances, along with the addition of incremental ground vias and shor...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Goins, D.A., Nelson, R.D., McKillop, J.S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The design of a 20 GHz RF MEMS switch uses proven elements from previous designs operating from DC to 7 GHz. Extensive analysis of the RF performance of the original switch showed certain bandwidth limitations. Elimination of RF resonances, along with the addition of incremental ground vias and shortening of conducting stubs significantly improved performance. Prototypes of the modified switch have demonstrated outstanding RF performance from DC to more than 20 GHz. Typical performance shows less than 0.4 dB insertion loss, more than 20 dB return loss, and 25 dB isolation (@ 20 GHz).
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2007.380448