Complementary bipolar devices for base station applications

A high dynamic range (DR) current reuse mixer and a linear push-pull buffer with an active area of 0.11 mm × 0.1 mm were realized for base station applications in a 5-V complementary 0.4- μ m SiGe process. At 2 GHz, a test block with the proposed mixer achieves a nominal measured DR of +154 dB, whil...

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Hauptverfasser:	Tiiliharju, E., Pellikka, H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Base stations Baseband Bills of materials Bipolar analog integrated circuits Buffer circuits CMOS technology Germanium silicon alloys Laboratories Microwave mixers Peak to average power ratio Power generation Silicon germanium Silicon on insulator technology
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Beschreibung
Zusammenfassung:	A high dynamic range (DR) current reuse mixer and a linear push-pull buffer with an active area of 0.11 mm × 0.1 mm were realized for base station applications in a 5-V complementary 0.4- μ m SiGe process. At 2 GHz, a test block with the proposed mixer achieves a nominal measured DR of +154 dB, while drawing 29 mA from a 3.3-V supply, whereas the push-pull buffer outputs an OP 1dB of +9 dBm, while drawing 33 mA from a 5-V supply.
ISSN:	0149-645X 2576-7216
DOI:	10.1109/MWSYM.2007.380378