A New PhotoFET for Monolithic Active Pixel Sensors Using CMOS Submicronic Technology

Monolithic Active Pixel Sensors (MAPS) using standard low cost CMOS technology available from industrial manufacturers have demonstrated excellent tracking performances for minimum ionizing particles. The need for highly granular, fast, thin and radiation tolerant pixel arrays equipping vertex detectors drives an intense R&D effort, aiming to optimize the intrinsic sensor performances. Following this main issue, we present a new design of PhotoFET. This structure offers the advantage to integrate inside the sensing element an amplification using PMOS transistor with a high sensitivity and a large dynamic. The proposed PhotoFET has been implemented with an AMS 0.35 μm process. In this paper, the PhotoFET architectures were presented and the main measured results were shown.