Two 10Gb/s/pin Low-Power Interconnect Methods for 3D ICs

Two RF techniques are combined with capacitive coupling interconnect to form ultra-wide-bandwidth impulse interconnect and RF interconnect in 3D IC technology. They achieve 10Gb/s/pin and 11Gb/s/pin transmission with 2.7mW/pin and 4.35mW/pin power consumption, respectively, using the MIT Lincoln Lab...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Gu, Qun, Xu, Zhiwei, Ko, Jenwei, Chang, Mau-Chung Frank
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Amplitude shift keying Bit error rate Capacitors Integrated circuit interconnections Integrated circuit technology Optical signal processing Radio frequency Radiofrequency interference RF signals Transceivers
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Two RF techniques are combined with capacitive coupling interconnect to form ultra-wide-bandwidth impulse interconnect and RF interconnect in 3D IC technology. They achieve 10Gb/s/pin and 11Gb/s/pin transmission with 2.7mW/pin and 4.35mW/pin power consumption, respectively, using the MIT Lincoln Lab 3D 0.18μm CMOS, an 8times improvement over previous work
ISSN:	0193-6530 2376-8606
DOI:	10.1109/ISSCC.2007.373487